KVL / Klausuren / MAP 1.HS: 13.04  2.HS: 25.05  Zw.Sem.: 18.07  Beginn WS: 10.10

4020150160 Symmetry breaking in semiconductors: Theory of defects and interfaces  VVZ 

VL
Mi 11-13
wöch. ZGW 6 1'21 (36) Sergey Levchenko

Digital- & Präsenz-basierter Kurs

Lern- und Qualifikationsziele
The course introduces modern methods for theoretical modeling of defects in the bulk and at the surfaces of semiconductors.
Gliederung / Themen / Inhalte
Defect formation energy
Charge-carrier trapping
Defect transition levels
Quasiparticles
Polarons
Green's functions
Many-body perturbation theory
Random-phase approximation
Many-body dispersion interaction
GW approximation
Charge transition levels
Long and short-range effects of doping
Space charge
Band bending
Ab initio atomistic thermodynamics
Zugeordnete Module
P23.2.1 P23.2
Umfang, Studienpunkte; Modulabschlussprüfung / Leistungsnachweis
0 SWS, 0 SP/ECTS (Arbeitsanteil im Modul für diese Lehrveranstaltung, nicht verbindlich)
Sonstiges
Room: ZGW 6 1.21
Sprache / Language of the course English
Literatur
N. W. Ashcroft and N. D. Mermin. Solid State Physics. Harcourt, Forth Worth 1976
A. Szabo and N. S. Ostlund. Modern Quantum Chemistry – Introduction to Advanced Electronic Structure Theory. Dover Publications 1996 (ISBN 0-0486-69186-1)
A. Fetter and J. D. Walecka. Quantum theory of many-particle systems. McGraw-Hill New York 1971 (ISBN 0-07-020653-8)
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